Ferroelectricity in Two Dimensional Indium(III) Selenide: Coupled In-Plane and Out-of-Plane Polarization for Next-Generation Electronics
Abstract
Ferroelectric memory has emerged as a promising candidate for next-generation non-volatile memory, owing to its low power consumption, rapid switching speeds, and high endurance. However, the miniaturization of traditional ferroelectric materials is hindered by the emergence of the depolarization field that emerges at the nanoscale. This limitation has impeded the compatibility of ferroelectric memory technologies with the continuous scaling of integrated circuits (ICs). The recent discovery of two dimensional indium(III) selenide has introduced a paradigm shift, as it maintains stable ferroelectricity even at the monolayer scale, thereby offering a viable solution to overcoming these challenges. Devices based on two dimensional indium(III) selenide including ferroelectric field-effect transistors (FeFETs), ferroelectric channel transistors, synaptic junctions, and memristors, have demonstrated considerable promise for emerging memory and computing applications. However, a comprehensive understanding of the material's atomic structure, as well as the underlying mechanisms of its ferroelectric switching, remains incomplete. This article provides a comprehensive review of the atomic structure of two dimensional indium(III) selenide across its various phases, its ferroelectric switching dynamics, and the performance of recent device implementations. Furthermore, the key challenges hindering the scalability and reliability of these devices are outlined, along with strategic research directions to accelerate the development of two dimensional indium(III) selenide based ferroelectric memory and neuromorphic computing systems. By identifying critical knowledge gaps and proposing targeted research avenues, a foundation is established for the integration of two dimensional indium(III) selenide into practical, high-performance industrial applications, thereby facilitating the advancement of next-generation memory solutions and cutting-edge computing architectures.