Comparative Analysis of Electron, Proton and Neutron Irradiation Damage in Gallium Arsenide Flexible Triple-Junction Solar Cells
Abstract
This paper presents a detailed investigation of the effects of 1 MeV electron, 1 MeV neutron, and 3 MeV proton irradiations on the performance of flexible inverted metamorphic GaInP/GaAs/InGaAs triple-junction (IMM3J) solar cells. The degradation mechanisms of the main electrical parameters and external quantum efficiency were quantitatively analyzed using an equivalent displacement damage dose (DDD) model. The experimental results demonstrate that significant performance degradation occurred after irradiation. When the DDD=3.82×1010 MeV/g, the maximum power output degraded to 82%, 74%, and 53% of its initial value under 1 MeV electron, 1 MeV neutron, and 3 MeV proton irradiation, respectively. External quantum efficiency degradation predominantly occurs in the long-wavelength region, with the In GaAs subcell exhibiting the most severe current density degradation under 3 MeV proton irradiation. Using the DDD model, the relative radiation damage coefficients for the IMM3J solar cells were determined to be Rep = 3.04 (1 MeV electron to 3 MeV proton), and Rnp = 2.29 (1 MeV neutron to 3 MeV proton). Short circuit current and open circuit voltage degradation models were used to analyze the degradation mechanism of the IMM3J solar cells.