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Synthesis of ZnO Thin Films Using Chemical Bath and Investigation of Physicochemical Properties

Pooja B. More, Sanjay B. Bansode, Mariya Aleksandrova, Sandesh R. Jadkar and Habib M. Pathan

Pooja B. More1

Sanjay B. Bansode1

Mariya Aleksandrova2

Sandesh R. Jadkar1

Habib M. Pathan1,*,Email

1 Advanced Physics laboratory, Department of Physics, Savitribai Phule Pune University, Pune, 411007, India

2 Technical University of Sofia, Department of Microelectronics, Sofia, 1000, Bulgaria

Abstract

Herein, we have synthesized ZnO thin films on the FTO (fluorine-doped tin oxide) substrate by chemical bath deposition method (CBD) at 70 ºC temperature. X-ray diffraction studies reveal that ZnO films have a hexagonal wurtzite structure with texturing along the (002) direction. In addition, scanning electron microscopy confirmed the formation of micron-sized rods oriented along the vertical (c-axis) direction. Moreover, various optical and photoelectrochemical (PEC) properties are examined. From U-V spectroscopy, the optical band gap of the ZnO thin film was found to be 3.1 eV. Photoluminescence spectra revealed that the film deposited which consists of a sharp emission in the UV region and broad emission in the visible region could be related to defects in ZnO. Electrochemical impedance spectroscopy shows that under illumination, the ZnO film shows PEC performance in terms of higher photocurrent density. The chronoamperometry shows stability test with photocurrent density vs. time was 60 μA/cm2. Furthermore, the Mott-Schottky curve confirms that the as-deposited ZnO films are n-type with a charge carrier density of 8.55×1018 cm-3.

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Publication details

Received: 26 Aug 2023
Revised: 06 Oct 2023
Accepted: 10 Oct 2023
Published online: 11 Oct 2023

Article type:
Research Paper

DOI:
10.30919/esee983

Volume:
22

Article :
983

Citation:
ES Energy & Environment, 2023, 22, 983

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Number of downloads:
241

Citation Information:
5

Description:

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