Transparent Conducting Gallium-Doped Zinc Oxide Thin Films on Glass Substrate for Optoelectronic Device Applications
Himadri Sekhar Das, Santanu Mishra, Mrinal Kanti Dash, Prasanta Kumar Nandi, Subir Kumar Maity, Debnarayan Khatua, Anindita Chatterjee, Zhanhu Guo, Ben Bin Xu, and Gourisankar Roymahapatra
Himadri Sekhar Das1,2,3Email
Santanu Mishra2
Mrinal Kanti Dash2
Prasanta Kumar Nandi3
Subir Kumar Maity4
Debnarayan Khatua5
Anindita Chatterjee6
Zhanhu Guo7
Ben Bin Xu7
Gourisankar Roymahapatra4
1 Department of Electronics and Communication Engineering, Haldia Institute of Technology, Haldia, 721657, India
2 Department of Applied Sciences, Haldia Institute of Technology, Haldia, 721657, India
3 Department of Chemistry, Indian Institute of Engineering Science and Technology, Shibpur, 711103, India
4 School of Electronics Engineering, Kalinga Institute Industrial Technology, Bhubaneswar, 751024, India
5 School of Sciences, Woxsen University, Hyderabad Telangana, 502345, India
6 Dept. of Chemistry, Raghu Engineering College, Visakhapatnam, Andhra Pradesh, 530062, India
7 Mechanical and Construction Engineering, Faculty of Engineering and Environment, Northumbria University, Newcastle Upon Tyne, NE1 8ST, UK
Abstract
Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10-4 Ω cm with an optical transmission of more than 90 %. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode based OLED. The obtained GZO based OLED shows similar performance compared with ITO based OLED devices.
Publication details
Received: 09 Nov 2022
Revised: 14 Mar 2023
Accepted: 15 Mar 2023
Published online: 15 Mar 2023
Article type:
Research Paper
DOI:
10.30919/esmm5f841
Volume:
22
Article :
841
Citation:
ES Materials & Manufacturing, 2023, 22, 841
Permissions:
Copyright
Number of downloads:
4195
Citation Information:
10
Description:
Transparent conducting Gallium-doped Zinc oxide thin films on glass substrate were built for optoele....
Transparent conducting Gallium-doped Zinc oxide thin films on glass substrate were built for optoelectronic device applications
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