Numerical Modeling to Improve the Efficiency of Cadmium Sulfide/Copper Indium Sulfide (CdS/CuInS2) Thin Film-Based Solar Cells

Bharati M. Sakunde1

Nandu B. Chaure1,Email

Shashikant Patole2

Sandesh R. Jadkar1

Habib. M. Pathan1,Email

Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune, 411007, India
Department of Physics, Khalifa University of Science and Technology, Abu Dhabi, 127788, UAE

Abstract

In this study, CIS-based devices were simulated and studied their performance by SCAPS (Solar Cell Capacitance Simulator) software. SCAPS is 1-dimensional graphic solar cell simulation software that estimates quantum efficiency, current-voltage characteristics, energy bands, and spectral response by solving Poisson's equations and continuity equations for electrons and holes. The solar cell structure was designed with CdS as an n-layer and CuInS2 as a p-layer for the first simulation and with ZnO as a window layer, CdS as a buffer layer, and with CuInS2 absorber layer for the next simulation. The CuInS2 layer thickness was changed from 0.5 to 2 µm, with other layer thicknesses kept constant, viz. 0.5 µm thickness for the CdS layer, which increased the solar cell efficiency from 5.6 to 8.47%. The optimized thickness of CuInS2 obtained was 2 µm. The thickness of ZnO varied from 0.15 to 1 µm, and the rest of the layer thicknesses were kept constant, viz. 2 µm for CuInS2, and 0.5 µm for CdS. An optimized 0.8 µm thickness of ZnO has been obtained with 12.74 % efficiency. The shallow uniform densities for the CuInS2 layer and ZnO layer were optimized to 1 x 1018 (1/cm3) and 1 x 1015 (1/cm3).