Jintian Jiang, Jing Xu, Huddoy Walter, Abul Kazi, Daoyuan Wang, Grant Wangila, Mansour Mortazavi, Chao Yan and Qinglong Jiang
1 Jiangsu University of Science and Technology, School of Materials and Science, Zhenjiang, Jiangsu, 212000, China
2 University of Arkansas, Department of Chemistry and Physics, Pine Bluff, Arkansas, 71601, USA
3 Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois, 60439, USA
Doping, introducing impurities in the materials, plays a critical role for junction formation in semiconductor. It directs the flow of charge carriers and improves their transport properties in the thin-film electronic devices including halide perovskite materials based optical-electric devices. Dopants can strongly modify electronic, optical and other properties of materials. Due to the relative smaller size, alkali metals play an important role for halide perovskite materials. In this review, recent research work on the doping of halide perovskite materials by alkali metals, especially the electrochemical doping, have been studied from the view of chemistry and physics.
Received: 20 Dec 2019
Revised: 10 Jan 2020
Accepted: 16 Jan 2020
Published online: 17 Jan 2020
Article type:
Review Paper
DOI:
10.30919/esmm5f705
Volume:
7
Page:
25-33
Citation:
ES Materials & Manufacturing, 2020, 7, 25-33
Permissions:
Copyright
Number of downloads:
3093
Citation Information:
7
Description:
Recent research work on the alkali metal doping of halide perovskite materials, especially the elect....
Recent research work on the alkali metal doping of halide perovskite materials, especially the electrochemical doping, have been summarized.
This article is cited by 7 publications.
This article is cited by 7 publications.
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