Superior Thermal Dissipation in Graphene Electronic Device Through Novel Heat Path by Electron-Phonon Coupling
Ying Zhang, Yaping Yan, Jie Guo, Tingyu Lu, Jun Liu, Jun Zhou and Xiangfan Xu
1 Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
2 Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina, 27695, USA
3 Zhejiang Province Key Laboratory of Quantum Technology and Device, Zhejiang University, Hangzhou, 310027, China
# These authors contributed equally to this work.
Abstract
Interfacial thermal resistance (ITR) plays an important role in thermal dissipation across different materials and it has been widely investigated in recent years. In this work, we measured the relative change of the ITR between metal and aluminum oxide treated with O2-plasma. Significant reduction of ITR is observed. The measured data shows that plasma treatment induces an order of magnitude decrease of ITR, which is mainly attributed to the direct electronphonon coupling across the interface. Scanning thermal microscopy technique measurement of graphene electronic devices on aluminum oxide gave direct evidence for heat dissipation applications by tuning the surface charge carries concentration.
Publication details
Received: 30 Sep 2019
Revised: 30 Nov 2019
Accepted: 03 Dec 2019
Published online: 07 Dec 2019
Article type:
Research Paper
DOI:
10.30919/esee8c386
Volume:
8
Page:
42-47
Citation:
ES Energy & Environment, 2020, 8, 42-47
Permissions:
Copyright
Number of downloads:
4360
Citation Information:
8
Description:
A novel heat path through the electron-phonon coupling at the interface is introduced for superior h....
A novel heat path through the electron-phonon coupling at the interface is introduced for superior heat dissipation in graphene-based electronic devices.
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