This study focuses on Zinc Oxide (ZnO) thin film growth and characterization on Indium tin oxide (ITO) substrates using a sol-gel assisted spin coating technique. Utilizing various zinc precursor salts, we highlight the method's cost-effective versatility and its potential for optoelectronic device applications. Through this approach, diverse morphologies of ZnO thin films are achieved, impacting their structural, morphological, compositional, and optical attributes. Notably, distinct precursor salts influence the estimated band gaps, with the ZnO-coated glass using zinc acetate dihydrate (Zn(CH3COO)2.2H2O) resulting in the FM-1 film, and the ZnO-coated glass using zinc nitrate hexahydrate (Zn(NO3)2.6H2O) resulting in the FM-2 film, showing band gaps of 3.08 eV and 2.96 eV, respectively. Current voltage characteristics are also investigated. This research positions ZnO as a promising candidate for optoelectrical devices, emphasizing its role in technological advancement and addressing energy and environmental challenges.