Analysis of the Influence of the Thickness of Transparent Conducting Oxide (GZO) with Ga-Doping and Its Use as Anode Materials in Organic Light-Emitting Diodes
Abstract
Transparent conducting oxides (TCOs) are projected as crucial materials for effective charge injection and light emission, which makes them suitable for developing organic light-emitting diodes (OLEDs). In this category, Ga-doped Zinc Oxide (GZO), known for its excellent electrical conductivity and transparency, serves as a promising alternative to indium-doped Tin Oxide (ITO). By depositing ZnO:Ga thin films of different thicknesses on glass substrates using radio frequency (RF) magnetron sputtering techniques, we observed that both electrical conductivity and transmittance decrease as the film thickness increases. Conducting X-ray diffraction (XRD) study enabled us to assess the crystalline quality of the films. Through this systematic research, authors determined an optimal range of GZO thicknesses for maximizing OLED performance, considering factors such as charge injection, light extraction, and device fabrication. The insights gained from this research offer valuable contributions to enhancing the transparency and performance of OLEDs. This advancement is crucial for various lighting and display applications, ultimately making OLED technology more cost-effective and efficient. By providing a deeper understanding of the relationship between GZO film thickness and OLED functionality, this study paves the way for further developments in OLED technology, facilitating its widespread adoption in diverse industries.