Study of the Application Prospects of Metal Oxide Films as Protective Materials for Electron Radiation Shielding

Dauren B. Kadyrzhanov1

Malik E. Kaliyekperov1,2

Ainash T. Zhumazhanova1,2

Artem L. Kozlovskiy1,2Email

Engineering Profile Laboratory, L.N. Gumilyov Eurasian National University, Satpayev St., Astana, 010008, Kazakhstan
Laboratory of Solid State Physics, The Institute of Nuclear Physics, Almaty, 050032, Kazakhstan

Abstract

The paper presents the results of a study of the prospects for the use of Cu2O/CuBi2O4 – CuBi2O4 – Bi2O3/CuBi2O4 films obtained using the method of electrochemical synthesis, deposited on polymer films proposed to be used as protective shielding materials in order to reduce the negative effects of electronic radiation. An analysis of the dependence of the variation in the applied potential difference on a change in the phase composition revealed that the main phase in the composition of the resulting films, regardless of the applied potential difference, is the tetragonal CuBi2O4 phase, the structural ordering of which is observed in the range of applied potential differences from 1.0 to 4.0 V. At the same time, an analysis of the observed phase transformations depending on the difference in applied potentials made it possible to determine the dynamics of changes in the phase composition, which can be written in the following form: Cu2O/CuBi2O4 – CuBi2O4 – BBi2O3/CuBi2O4. During the conducted research aimed at determination of the effectiveness of protection from the negative effects of electronic radiation, it was found that the most effective are films of the Bi2O3/CuBi2O4 type, the use of which makes it possible to reduce the effect of failures (changes in the value of ∆U above 0.1 V) of microcircuits during high-dose irradiation with electrons with energies of 1.0 and 2.5 V, as well as to maintain the stability of the performance of microcircuits at low doses of radiation (not higher than 100 kGy) at electron energies of 5.0 MeV.